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Influence of Local Phonon Modes in Wideband Matrix on Tunnel Current-Voltage Characteristics for Semiconductor Quantum Dots
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Volume 1, 2014
Issue 1 (September)
Pages: 8-11   |   Vol. 1, No. 1, September 2014   |   Follow on         
Paper in PDF Downloads: 34   Since Aug. 28, 2015 Views: 841   Since Aug. 28, 2015
Vladimir Krevchik, Department of Physics, Penza State University, Penza, Russia.
Michael Semenov, Department of Physics, Penza State University, Penza, Russia.
Roman Zaitsev, Department of Physics, Penza State University, Penza, Russia.
Dmitry Filatov, Physico-Technical Research Institute, Nizhny Novgorod State University of N. I. Lobachevsky, Nizhny Novgrod, Russia.
Paul Krevchik, Department of Physics, Penza State University, Penza, Russia.
Anastas Bukharaev, Laboratory of Physics and Chemistry of the Surface, Kazan Volga Federal University, Kazan, Russia.
Askar Aringazin, Institute for Basic Research, Eurasian National University of L. Gumilev, Astana, Kazakhstan.
Vladimir Kalinin, Department of Physics, Penza State University, Penza, Russia.
One-dimensional dissipative quantum tunneling model has been proposed to interpret the experimental current-voltage characteristics of tunnel contact between atomic force microscope (AFM) probe and surface of InAs/GaAs(001) quantum dots studied in the tunneling AFM experiment on measuring local density of states. Within the framework of our approach of dilute instanton-antiinstanton gas, we made exact analytical calculation of tunneling probability rate for one charged particle weakly interacting with two local phonon modes in the wide-band matrix, which characterizes medium. The obtained theoretical result is in a good agreement with the experimental current-voltage characteristics. Namely, number, position, and heights of the observed peaks in the current-voltage characteristics of quantum dot devices based on a single-electron tunnel effect can be explained by the calculated effect of the wide-band matrix on the tunneling probability rate. This discovery enable possibility to set control over current-voltage characteristics of the semiconductor tunnel nanoelectronic devices.
Quantum Tunneling with Dissipation, Quantum Dots, Tunnel Current-Voltage Characteristics
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