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Influence of Local Phonon Modes in Wideband Matrix on Tunnel Current-Voltage Characteristics for Semiconductor Quantum Dots
Current Issue
Volume 1, 2014
Issue 1 (September)
Pages: 8-11   |   Vol. 1, No. 1, September 2014   |   Follow on         
Paper in PDF Downloads: 34   Since Aug. 28, 2015 Views: 841   Since Aug. 28, 2015
Authors
[1]
Vladimir Krevchik, Department of Physics, Penza State University, Penza, Russia.
[2]
Michael Semenov, Department of Physics, Penza State University, Penza, Russia.
[3]
Roman Zaitsev, Department of Physics, Penza State University, Penza, Russia.
[4]
Dmitry Filatov, Physico-Technical Research Institute, Nizhny Novgorod State University of N. I. Lobachevsky, Nizhny Novgrod, Russia.
[5]
Paul Krevchik, Department of Physics, Penza State University, Penza, Russia.
[6]
Anastas Bukharaev, Laboratory of Physics and Chemistry of the Surface, Kazan Volga Federal University, Kazan, Russia.
[7]
Askar Aringazin, Institute for Basic Research, Eurasian National University of L. Gumilev, Astana, Kazakhstan.
[8]
Vladimir Kalinin, Department of Physics, Penza State University, Penza, Russia.
Abstract
One-dimensional dissipative quantum tunneling model has been proposed to interpret the experimental current-voltage characteristics of tunnel contact between atomic force microscope (AFM) probe and surface of InAs/GaAs(001) quantum dots studied in the tunneling AFM experiment on measuring local density of states. Within the framework of our approach of dilute instanton-antiinstanton gas, we made exact analytical calculation of tunneling probability rate for one charged particle weakly interacting with two local phonon modes in the wide-band matrix, which characterizes medium. The obtained theoretical result is in a good agreement with the experimental current-voltage characteristics. Namely, number, position, and heights of the observed peaks in the current-voltage characteristics of quantum dot devices based on a single-electron tunnel effect can be explained by the calculated effect of the wide-band matrix on the tunneling probability rate. This discovery enable possibility to set control over current-voltage characteristics of the semiconductor tunnel nanoelectronic devices.
Keywords
Quantum Tunneling with Dissipation, Quantum Dots, Tunnel Current-Voltage Characteristics
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