Characterizations of Spharelite ZnS:Sn Thin Film for Applications
The thermally evaporated ZnS thin film has been successfully grown and doped with Sn using vacuum evaporator. XRD spectra revealed cubic, Spharelite, ZnS (h k l) = (2 2 0) film doped with Sn at 2θ = 47.48°, lattice spacing, d = 1.91.The ZnS:Sn films roughness values of Ra = 17.34nm and Rq = 27.01nm are obtained from the film deposited at 100°C and at thickness of 500nm. SEM revealed densely packed, big grains, pin-hole free and the films uniformly covered the surface of glass substrates. The grain size is about 2µm. Zn, Sn and S with artefacts such as O2, Si, Mg, Ca and Na with their compositional percentages were identified by EDX. The energy bandgap of Spharelite ZnS:Sn film was found to be 3.80eV at 100°C with thickness 500nm. The average sheet resistance, Rs is 11.47 Ω and the average resistivity, ρ is found to be 1.833 x 10-3Ω-cm.
Sphalerite ZnS, Thermal Evaporator, Energy Bandgap, Optical Transmittance and X-Ray Diffraction
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