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Spin Dependent Peltier Effect in Ferromagnetic Graphene / Superconducting Graphene Junction
Current Issue
Volume 2, 2015
Issue 6 (November)
Pages: 36-42   |   Vol. 2, No. 6, November 2015   |   Follow on         
Paper in PDF Downloads: 134   Since Oct. 23, 2015 Views: 1077   Since Oct. 23, 2015
Authors
[1]
Ahmed S. Abdelrazek, Faculty of Engineering, Kafr-Elsheikh University, Kafr-Elsheikh, Egypt.
[2]
Mohamed M. El-banna, Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
[3]
Adel H. Phillips, Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
Abstract
A spin dependent Peltier effect in graphene nanodevice is investigated. This nanodevice is modeled as ferromagnetic graphene/ superconducting graphene junction with Schottky barrier of delta-type at the interface of the junction. The Peltier coefficient is expressed in terms of spin-dependent Andreev reflection and normal reflection which will be deduced by solving Dirac-Bogoliubov-deGennes equation in one dimension. Numerical calculations are performed for two different superconducting layers under the effects of the induced ac-field and magnetic field. Results show that the present nanodevice operates only in narrow band of THz frequencies. Also, the present results might indicate that the present nanodevice is stable under the effect of magnetic field, which must be needed for quantum information processing. The present graphene nanodevice based on Peltier effect might be used as coolers for nanoelectronic devices such as nanocontrollers and computer CPUs. The present research is very important in the field of spin caloritronics on the nanoscale systems and at low temperatures.
Keywords
Spin-Caloritronics, Ferromagnetic Graphene, Superconducting Graphene, Spin Peltier Coefficient, Ac-field, Magnetic Field
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